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SPICE Simulation of CMOS Circuits Behavior for Extreme Ambient Applications Using “Electro-Thermo-Rad” models
Authors
	Kharitonov I.A.
Date of publication
	2018
DOI
	10.31114/2078-7707-2018-3-103-110
Abstract
	Using published MOSFETs characteristic degradation after TID irradiation in various thermal ambient parameters of “electro-thermo-rad” SPICE models were defined. Two examples were considered: radiation hardened 2 µm CMOS technology of Sandia National Laboratory and 130 nm CMOS technology. Models were verified using SRAM sell simulation (for 2 µm technology) and voltage reference, ring oscillator and logic gates circuit (for 130 nm technology). For the cases when elevated temperature results to enhanced interface traps generation in MOSFET oxides, the paper presents quantitative estimates for the increased degradation of mentioned circuits characteristics under the mentioned external conditions. The importance of account for combined temperature and total dose influence on CMOS circuit is shown.
Keywords
	CAD systems, CMOS, ambient temperature, total ionizing dose, threshold voltage, mobility, oxide charge, interface states, SPICE models, electro-thermo-rad model, SRAM cell, ring oscillator, NAND circuit, radiation hardness.
Library reference
	Kharitonov I.A. SPICE Simulation of CMOS Circuits Behavior for Extreme Ambient Applications Using “Electro-Thermo-Rad” models // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 3. P. 103-110. doi:10.31114/2078-7707-2018-3-103-110
URL of paper
	http://www.mes-conference.ru/data/year2018/pdf/D136.pdf