| Dynamics of Magnetization in the Free Layer of a Spin Valve Under the Influence of Magnetic Field, Perpendicular and Parallel to the Layer Plane |
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| Authors |
| | Ostrovskaya N.V. |
| | Skidanov V.A. |
| | Iusipova Iu.A. |
| Date of publication |
| | 2018 |
| DOI |
| | 10.31114/2078-7707-2018-3-173-180 |
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| Abstract |
| | The object under investigation is a spin valve with longitudinal magnetic anisotropy. The valve is governed by the combined influence of the magnetic field and spin-polarized injection current. We considered two cases of field configuration: the first one is when the field is perpendicular to the layer plane; the second one is the case when the field is parallel to it. For both cases, we derived the dynamical system of equations describing the dynamics of the magnetization vector in the free layer of the valve and calculated the coordinates of the singular points of this system. On the basis of the qualitative analysis we found the following types of switching dynamics of the magnetization in the free layer: switching from the unstable position to the single stable one, switching from unstable position to two stable positions with two equally probable issues, and the modes with stable and semi-stable limit cycles.
We determined the threshold switching values of the field and current for both types of the field orientation and found that they are close to each other. However, they are substantially higher than the switching threshold values in the case of longitudinal field orientation.
The optimal functioning of the valve as a nano-oscillator corresponds to the mode with a stable limit cycle. We determined the intervals of the magnetic fields and current where the amplitude and the frequency of the nano-oscillator are maximal. |
| Keywords |
| | spin valve, magnetoresistive random-access memory, nano-oscillators, MRAM, STNOs. |
| Library reference |
| | Ostrovskaya N.V., Skidanov V.A., Iusipova Iu.A. Dynamics of Magnetization in the Free Layer of a Spin Valve Under the Influence of Magnetic Field, Perpendicular and Parallel to the Layer Plane // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 3. P. 173-180. doi:10.31114/2078-7707-2018-3-173-180 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2018/pdf/D086.pdf |
