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Single Event Rate Evaluation for Modern ICs
Authors
	Sogoyan A.V.
	Chumakov A.I.
	Smolin A.A.
Date of publication
	2018
DOI
	10.31114/2078-7707-2018-4-170-176
Abstract
	The classical concept of total charge collection within a lim-ited sensitive volume (typically a rectangular parallelepiped) to this day remains the basis of the majority of approaches to single-event-effect (SEE) rate (SER) prediction. However, the applicability of this concept to modern ICs is impaired by a growing number of issues, including an increased role of multiple cell upsets (MCUs) and the uncertainty in extraction of a large set of parameters that no longer correspond to any physical parameters of the device. The goal of this work is to propose an alternative simple physics-based approach to SER estimation that can serve as a direct replacement of the integral rectangular parallelepiped (IRPP) method. To that end, we have built a model describ-ing SEE cross section dependence on LET based on physical-ly valid assumptions. This model accounts for the influence of well borders and the angular dependence of cross-section allowing us to correlate the cross-section is(LET) in an iso-tropic particle field with the experiment. It should be noted, however, that there is high uncertainty in estimating SEE cross-sections in the near-threshold region. The results presented in the paper indicate that uncertainty in the extraction of Weibull parameters and arbitrary as-signment of the sensitive volume thickness can lead to a spread of several orders of magnitude in subsequently calcu-lated SER. In contrast, the model proposed in this paper contains only two parameters, which are uniquely deter-mined from experimental data for normal ion incidence. This feature greatly simplifies the calculation procedure and in-creases the robustness of the forecast.
Keywords
	Single event effects, single event rate, CMOS, diffusion charge collection, isotropic field.
Library reference
	Sogoyan A.V., Chumakov A.I., Smolin A.A. Single Event Rate Evaluation for Modern ICs // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 4. P. 170-176. doi:10.31114/2078-7707-2018-4-170-176
URL of paper
	http://www.mes-conference.ru/data/year2018/pdf/D063.pdf