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A High Speed Level Shifter for High Voltage Supply Range with High Reliability  

Authors
 Sergeychuk D.
Date of publication
 2018
DOI
 10.31114/2078-7707-2018-4-24-29

Abstract
 A novel topology for a high speed voltage level shifter has been made up. This new circuit uses common-gate input cascode, which consists of low- and high-voltage transistors for increasing strength of push n-MOS transistors. Another feature is that level shifter drives only output invertor’s p-MOS transistor. N-MOS transistor has been replaced on cascode too and is driven with input low voltage signal directly. The voltage level shifter was designed in CMOS 40nm process. Simulation results, at the schematic level, presents to validate the design concept.
Keywords
 Voltage Level Shifter; High Speed; Short Circuit Current; Cascode.
Library reference
 Sergeychuk D. A High Speed Level Shifter for High Voltage Supply Range with High Reliability // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 4. P. 24-29. doi:10.31114/2078-7707-2018-4-24-29
URL of paper
 http://www.mes-conference.ru/data/year2018/pdf/D048.pdf

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