| Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event |
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| Authors |
| | Pugachev A.A. |
| | Ivanova G.A. |
| Date of publication |
| | 2018 |
| DOI |
| | 10.31114/2078-7707-2018-3-181-188 |
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| Abstract |
| | The resolution is the main parameter of image sensors, and the modulation transfer function (MTF) is main figure of merit of resolution. The paper is about the new method for resolution degradation modeling under one single impact particle (SIP) event This method are based on 2-dimenshional physical-topological simulation of photogenerated carriers distribution in photosensitive pixels. This model established the direct dependence between resolution (MTF) and topological and technological parameters of VLSI and parameters of impact particle. For MTF calculation under the SIC event condition the test-input signal have been developed. With this test signal the various constructions of photosensitive pixels may be compared.
The model gives new aids for photosensor design and overcomes restrictions of analytical resolution models. The simulation results confirm the universal character of the new MTF calculation method. |
| Keywords |
| | modulation transfer function, matrix image sensor, single impact particle, CCD VLSI design. |
| Library reference |
| | Pugachev A.A., Ivanova G.A. Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 3. P. 181-188. doi:10.31114/2078-7707-2018-3-181-188 |
| URL of paper |
| | http://www.mes-conference.ru/data/year2018/pdf/D036.pdf |
