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Design and development of monolithic IC of microwave GaN phase shifters
Authors
	Timoshenko A.G.
	Belousov E.O.
	Molenkamp K.M.
Date of publication
	2016
Abstract
	Considering modern requirements for electronic components [1]-[4], recent research shows increased interest in design and development of wide band gap semiconductors and devices based on them [5]-[16]. The GaAs and InP materials which were previously used for most microwave applications have several disadvantages [17], which do not accommodate obtaining required performance for modern 4G cellular communication systems, satellite communications, and radio location [18]-[19]. One of the promising [20]-[27] wide band gap materials currently is gallium nitride. The review of existing GaN monolithic ICs of phase shifters for C-, X- and Ku- ranges is presented in the Section II [28]-[33]. For creating the TCAD transistor model to calculate drain current, threshold voltage, transconductance, parasitic capacitances, and channel conductance of GaN transistor the analytical model Level 2 was used. During developing of small signal model distributed circuit elements was considered as lumped elements [34]. Small signal equivalent model for AlGaN/GaN HEMT [35] includes all parasitic capacitances between every terminal and ground and consists for modeling purposes of two parts: internal non-linear and biased part without terminal parasitic elements and external linear non-biased part with parasitics. After analysis the transistors layout was designed, photomasks for contact lithography were fabricated, and herewith transistors prototypes. Measurements show ohmic contacts resistance of 0.36 Ω•mm. Model Level 2 parameters were corrected after measurements to consider the charge polarization, which affects drain current, and the exact heterostructure [36]-[43]. Designed model can be built in modern CAD as a subcircuit and allows devices and circuit elements simulation. Comparison of simulation and measurements results shows good match of main dependence and negligible parameters variety. For phase shifter design the switched high and low frequency filters method was used [44]. Each of LC HF filter operates on certain frequency with fixed phase shift of 90°. For each design in the frequency range of 0.1 – 31.5 GHz phase shifter was simulated to measure working range, parasitic amplitude conversion, maximum phase shift with allowed losses.
Keywords
	Microwave, monolithic IC, wide band gap semiconductors, GaN, phase shifters, small signal model, s-parameters.
Library reference
	Timoshenko A.G., Belousov E.O., Molenkamp K.M. Design and development of monolithic IC of microwave GaN phase shifters // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 3. P. 25-32.
URL of paper
	http://www.mes-conference.ru/data/year2016/pdf/D169.pdf