| Development of microwave phase shifter based on SOI 0.18-micron technology |
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| Authors |
| | Efimov A.G. |
| | Koptsev D.A. |
| | Kuznetsova O. |
| Date of publication |
| | 2016 |
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| Abstract |
| | Considered and determined the basic design implementation decisions fazovraschayuschih microwave devices. This article presents the results of simulations developed digital phase shifter. Modelling of the switching circuit element. The algorithm of optimization parameters. Modelling conducted among Cadence Virtuoso. Relevance of the work lies in solving the problem of import of components for chips. The aim of the article is to find designs that will implement the 6-bit phase shifter for semiconductor frequency X-band based on domestic technology 0.18 micron SOI JSC "NIIME" and Micron.
The paper substantiates the use of a silicon CMOS SOI technology with topological 0.18 microns. The advantages of SOI technology for manufacturing microwave IC. |
| Keywords |
| | semiconducting phase shifter, SOI technology, the microwave range, MFCC. |
| Library reference |
| | Efimov A.G., Koptsev D.A., Kuznetsova O. Development of microwave phase shifter based on SOI 0.18-micron technology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 3. P. 33-38. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2016/pdf/D172.pdf |
