| Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits |
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| Authors |
| | Chaplygin Yu.A. |
| | Balashov A.G. |
| | Evdokimov V. |
| | Klyuchnikov A.S. |
| Date of publication |
| | 2016 |
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| Abstract |
| | Decreasing topological dimensions in the contemporary generation of BiCMOS technologies and the proportional shrinking of the n-p-n silicon-germanium heterojunction bipolar transistor (SiGe HBT) uncertainly leads to its RF performance magnification that means the comprehensive adaptation of it structure is needed. It is designed and implemented an approach to the scaling and constructive-technological modification of the SiGe HBT structure by means of tuned Synopsys Technological CAD that allows the cut-off frequency to exceed 100 GHz threshold. |
| Keywords |
| | silicon-germanium, SiGe HBT, BiCMOS technology, RF performance. |
| Library reference |
| | Chaplygin Yu.A., Balashov A.G., Evdokimov V., Klyuchnikov A.S. Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 32-36. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2016/pdf/D139.pdf |
