Investigation of the influence dispersion of technological parameters of VLSI on resistance to TID effects by device-technological simulation

Seletskiy, A.V.; Shelepin, N.A.; Smolin, A.A.; Ulanova, A.V.

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Investigation of the influence dispersion of technological parameters of VLSI on resistance to TID effects by device-technological simulation

Authors

Date of publication

2016

Abstract

This paper explores the problem of radiation resistance variation to the TID effects related to the dispersion of technological parameters. With the device-technological modeling was simulated the process flow of a typical CMOS manufacturing technology with 0.18 micron technology standards, anadromous CVC of NMOS transistors and radiation leakage arising due to the impact of TID effects.
Analysis of the results showed a strong dependence of the level of absorbed dose of radiation required for the formation of radiation-induced leakage currents from technological dispersion. The difference between the maximum and minimum threshold dose formation of radiation-induced leakage exceeds 50%.
The reason for such results is a variations of concentration of the impurities in the P-well at STI/silicon interface, caused by not optimal (from the point of view of the radiation resistance) implantation regimes. In this connection, the concentration variations were about 67.14%.
This work shows the possibility of finding critical (from the point of view of the resistance to TID's leakages), the technological operations of manufacture of CMOS VLSI, by device-technological simulation. This is useful for the development of control mechanism the resistance to the absorbed dose of radiation and development RHBD technologies.

Keywords

CMOS, technological dispersion, radiation hardening, TID.

Library reference

Seletskiy A.V., Shelepin N.A., Smolin A.A., Ulanova A.V. Investigation of the influence dispersion of technological parameters of VLSI on resistance to TID effects by device-technological simulation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 178-183.

URL of paper

http://www.mes-conference.ru/data/year2016/pdf/D121.pdf