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The method for CMOS APS light-voltage characteristics technological-device modeling
Authors
	Kononov A.
	Pugachev A.A.
Date of publication
	2016
Abstract
	In recent years, great effort has been put into the development of CMOS active pixel image sensors (CMOS APS) owing to their many advantages over CCD, such as low cost, low power consumption, system integration and compatibility with the CMOS process. Because the topological and impurity distribution surface and volume non-uniformities, the three-dimensional technological-device modeling are needed to optimized the CMOS-APS pixel. The active area shape together with the photocarrier diffusion effect are the determining the overall CMOS APS characteristics [1-3]. In this study, advanced TCAD device simulations were designed to analyze and predict the performance of CMOS APS characteristics. The method for simulation and optimization are with the computer analysis tool Sentaurus TCAD (Synopsys) [5]. The designed method are based on three techniques. Technique 1. The two-dimensional region of modeling is the combination of two sections of real three-dimensional structure: the section of photodiode region and the section of floating-node region. Technique 2. The real dimensions of photodiode and transistors of floating-node region are modeled through correction of pixel transistors and photodiode dimensions in final modeling structure. Technique 3. The real capacitances of CMOS APS pixel regions are modeled through the supplementation of additional capacitors in final modeling structure. The testing of various CMOS APS models demonstrates with additional capacitance gives the shortest calculation times and correction convenience for model with additional capacitors. Simulation of real CMOS APS pixels demonstrates the good convenience of present method for real design process and good agreement with experimental data.
Keywords
	CMOS-APS, light-voltage characteristic, tschnological-device model, TCAD.
Library reference
	Kononov A., Pugachev A.A. The method for CMOS APS light-voltage characteristics technological-device modeling // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 100-106.
URL of paper
	http://www.mes-conference.ru/data/year2016/pdf/D107.pdf