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Structural optimization and development of the monolithic IC SiGe active attenuator

Authors
 Mukhin I.I.
 Repin V.V.
Date of publication
 2014

Abstract
 This paper reports the activ attenuator with an extended frequency range, results of modeling and measurement of the activ attenuator
Keywords
 activ attenuator, SPDT MOS switch, RF IC
Library reference
 Mukhin I.I., Repin V.V. Structural optimization and development of the monolithic IC SiGe active attenuator // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 39-42.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D169.pdf

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