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| Calibration of numerical TCAD model for 180 nm SOI MOSFETs |
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| Authors |
| | Artamonova E.A. |
| | Klyuchnikov A.S. |
| | Krasukov A.Yu. |
| | Krupkina T.Yu. |
| | Shelepin N.A. |
| Date of publication |
| | 2014 |
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| Abstract |
| | The paper present the results of calibration of the numerical TCAD model for 180 nm SOI MOSFETs.
Parameters of the numerical model had been adapted to fit the experimental capacitance-voltage characteristics and current-voltage characteristics of the transistors |
| Keywords |
| | MOS structure, numerical simulation, Silicon-On-Insulator, SOI, TCAD |
| Library reference |
| | Artamonova E.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A. Calibration of numerical TCAD model for 180 nm SOI MOSFETs // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 151-154. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D160.pdf |
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