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Modeling TID leakage current in MOS-structures under x-ray and gamma irradiation
Authors
	Smolin A.A.
	Ulanova A.V.
	Sogoyan A.V.
	Demidov A.A.
Date of publication
	2014
Abstract
	In some cases the difference between criterion parameters TID degradation under x-ray and gamma irradiation is observed. This effect was investigated using TCAD modeling of radiation induced charge trapping in MOS-structures' field oxides under two types of irradiation. Connection between spatial distribution of trapping centers in deposited oxides and leakage current TID degradation kinetics under x-ray and gamma irradiation was established.
Keywords
	MOS, STI, leakage current, TID degradation, gamma radiation, x-ray radiation
Library reference
	Smolin A.A., Ulanova A.V., Sogoyan A.V., Demidov A.A. Modeling TID leakage current in MOS-structures under x-ray and gamma irradiation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 197-200.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D154.pdf