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Dependence of MCU Sensitivity in SRAM on Data Pattern and angle of incident
Authors
	Boruzdina A.B.
	Ulanova A.V.
	Gorbunov M.S.
	Chumakov A.I.
Date of publication
	2014
Abstract
	Results of research of influence angle of incident concerning a normal to a crystal surface on frequency rate of failures in the cells of SRAM on 6T cell type made on technologies of 65 nm are presented in paper. Comparison of data on the Sensitivity for MCU, received was carried out at radiation at an angle and at normal falling of the heavy charge particles at close values of effective linear energy transfer. It is as a result established that with growth of a corner of influence of heavy charge particles increases both frequency rate of failures, and a share of MCUs from total number of events. When carrying out research influence of pattern on frequency rate of failures in the store constructed on cells of 6T of type also was observed
Keywords
	heavy charge particles, multiple cell upsets (MCU), SRAM
Library reference
	Boruzdina A.B., Ulanova A.V., Gorbunov M.S., Chumakov A.I. Dependence of MCU Sensitivity in SRAM on Data Pattern and angle of incident // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 181-184.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D099.pdf