| Research and development of structures for the extraction of circuit model parameters accounting dose radiation effects in submicron VLSI |
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| Authors |
| | Titov A.I. |
| | Shelepin N.A. |
| | Seletskiy A.V. |
| Date of publication |
| | 2014 |
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| Abstract |
| | In this paper is reseached problems of circuit simulation of radiation effects presented in submicron VLSI.Presented the development of a minimum set of test structures for the extraction of radiation-dependent parameters of CMOS transistors fabricated on bulk silicon technology. |
| Keywords |
| | CMOS, cosmic radiation, radiation hardening |
| Library reference |
| | Titov A.I., Shelepin N.A., Seletskiy A.V. Research and development of structures for the extraction of circuit model parameters accounting dose radiation effects in submicron VLSI // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 149-154. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D045.pdf |
