| Development and modeling for submicron PDCFET transistors |
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| Authors |
| | Krasnyuk A.A. |
| | Orlov O.M. |
| | Imametdinov A. |
| | Maryina E. |
| Date of publication |
| | 2014 |
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| Abstract |
| | A model is proposed for the characterization of submicron FETs with periodically doped channel - PDCFET. Performance improvement by changing the relation between the lengths of heavily and lightly doped channel parts is possible. |
| Keywords |
| | MOS FET transistors, periodically doped channel, TCAD - modeling, self-formation phenomenon of nanostructures. |
| Library reference |
| | Krasnyuk A.A., Orlov O.M., Imametdinov A., Maryina E. Development and modeling for submicron PDCFET transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 155-158. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D024.pdf |
