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Readout circuit from the nonvolatile memory

Authors
 Kartashev S.S.
Date of publication
 2014

Abstract
 An electric readout circuit for reading from nonvolatile memory cells is presented in this paper. Although the reading method is conventional and based on the average control current flowing through the memory cells, new manner of the current determination is shown. The advantages of a new approach for reading allows the number of ‘read-write’ cycles to increase, providing higher reliability compare to the conventional approaches.
Keywords
 nonvolatile memory, readout circuits, flash-memory, EEPROM.
Library reference
 Kartashev S.S. Readout circuit from the nonvolatile memory // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 4. P. 3-6.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D021.pdf

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