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Modeling of plasma-chemical etching technology in CF4/H2 mixture
Authors
	Gorobchuk A.G.
	Grigoryev Yu.N.
Date of publication
	2014
Abstract
	In the frame of hydrodynamic approach the technology of plasma-chemical etching of silicon in CF4/H2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, CH2F2. The most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF2, which at 40% H2 completely covers a silicon surface and stops the etching process.
Keywords
	plasma-chemical etching, plasma-chemical reactors, multicomponent gas mixtures, mathematical modeling
Library reference
	Gorobchuk A.G., Grigoryev Yu.N. Modeling of plasma-chemical etching technology in CF4/H2 mixture // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 137-140.
URL of paper
	http://www.mes-conference.ru/data/year2014/pdf/D017.pdf