| Using of VBIC model for SiGe integrated circuit application |
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| Authors |
| | Chaplygin Yu.A. |
| | Adamov Yu.F. |
| | Timoshenkov V.P. |
| Date of publication |
| | 2014 |
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| Abstract |
| | Using of VBIC model SiGe IC application is investigated. Comparison of model parameters and experimental results is done. Influence of base resistance on static characteristic is developed. |
| Keywords |
| | heterojunction bipolar transistor (HBT), silicon-germanium, VBIC model |
| Library reference |
| | Chaplygin Yu.A., Adamov Yu.F., Timoshenkov V.P. Using of VBIC model for SiGe integrated circuit application // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 93-98. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D018.pdf |
