| Simulation of SEU transients in CMOS 28-nm DICE cells subject to single-event multi-node charge collection |
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| Authors |
| | Stenin V.Ya. |
| Date of publication |
| | 2014 |
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| Abstract |
| | The technology node scaling leads to single event upset by a charge sharing in the CMOS SRAM DICE cells during a single event. The DICE cell layouts base on the spacing the two transistor clusters which of them consists of the closed pair N-PMOS transistors and the opened pair N-PMOS transistors. The upset non steady state mechanisms in 28 nm CMOS DICE cell are detailed. The DICE cell single event transients are described. |
| Keywords |
| | CMOS DICE cell, single nuclear particle, single-event upset, single event charge sharing, simulation |
| Library reference |
| | Stenin V.Ya. Simulation of SEU transients in CMOS 28-nm DICE cells subject to single-event multi-node charge collection // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 137-140. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D011.pdf |
