| Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity |
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| Authors |
| | Chaplygin Yu.A. |
| | Krupkina T.Yu. |
| | Krasukov A.Yu. |
| | Artamonova E.A. |
| Date of publication |
| | 2014 |
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| Abstract |
| | We investigate the possibility of improvement of CMOS Hall Effect Magnetic Sensor Sensitivity by changing the device active region layout. Compared with traditional rectangular shape hall effect sensor, the proposed design can improve the current-related sensitivity from 236 to 1500 V/(A*T). |
| Keywords |
| | Hall effect sensor, magnetic sensitivity, CMOS |
| Library reference |
| | Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 179-184. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2014/pdf/D007.pdf |
