| Radiation hardened EEPROM structures integrated with SOI CMOS techology |
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| Authors |
| | Gryaznov E.G. |
| | Mansurov A.N. |
| | Petrosyants K.O. |
| Date of publication |
| | 2012 |
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| Abstract |
| | Three types of radiation hardened EEPROM structures most perspective for integration with SOI CMOS techology are considered: Ferroelectric Random Access Memory (FRAM); Magnetoresistive Random Access Memory (MRAM); Phase Change Memory (PCM). |
| Keywords |
| | EPROM, SOI CMOS technology, FRAM, MRAM, PCM |
| Library reference |
| | Gryaznov E.G., Mansurov A.N., Petrosyants K.O. Radiation hardened EEPROM structures integrated with SOI CMOS techology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 608-611. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D166.pdf |
