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Optimization of the breakdown voltage in IGBT structure on the base of its constructive and technology parameters
Authors
	Lovshenko I.Yu.
	Nelayev V.V.
	Shelibak I.M.
	Turcevich A.S.
Date of publication
	2012
Abstract
	Breakdown voltage of bipolar transistor as an element of power IGBT structure depends from the electric field distribution near lateral part of the collector p-n-junction. This distribution and its maximum depend from p-n-junction voltage, space carrier region distribution and impurity concentration on the both sides of the p-n-junction. Use of guard rings and field coating technologies brings to electric field distribution changing and, consequently, to breakdown voltage changing. The influence of constructive and technology parameters of IGBT structure on its breakdown voltage is discussed in the paper.
Keywords
	Insulated gate bipolar transistor, IGBT structure, construction, manufacturing technology, current-voltage features, breakdown voltage, optimization.
Library reference
	Lovshenko I.Yu., Nelayev V.V., Shelibak I.M., Turcevich A.S. Optimization of the breakdown voltage in IGBT structure on the base of its constructive and technology parameters // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 203-206.
URL of paper
	http://www.mes-conference.ru/data/year2012/pdf/D158.pdf