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I-V Characteristics Calculation Model of SiC Based Nanoscale Mosfet With Deep Impurities and Trap Levels
Authors
	Buniatyan V.V.
	Tamrazyan A.A.
Date of publication
	2012
Abstract
	A theoretical investigation of the dependence of drain current of nanoscale SiC MOSFET was carried out by taking into account the fact that the impurities in the transistor channel are deep, and there are trapping centers for electrons in the band gap . The dependence of carrier mobility on temperature, electric field and impurity concentration were taken into account. It was also taken into account the presence of surface states, two-dimensional potential distribution under the gate and the dependence of the threshold voltage of the length and width of the channel. Introduced a new analytical model for calculation of drain current of transistor with submicron channel.
Keywords
	carbide (SiC), narrow and short channel MOSFET, I-V characteristics, charge currier mobilitiy, deep impurity, trap levels.
Library reference
	Buniatyan V.V., Tamrazyan A.A. I-V Characteristics Calculation Model of SiC Based Nanoscale Mosfet With Deep Impurities and Trap Levels // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 181-186.
URL of paper
	http://www.mes-conference.ru/data/year2012/pdf/D139.pdf