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Impact of ionizing radiation on GaN HEMTs
Authors
	Gromov D.V.
	Matveev Y.A.
	Nazarova G.N.
Date of publication
	2012
Abstract
	An analysis of radiation effects in microwave HEMTs based on GaN under ionizing radiation has been presented. Physical mechanisms of radiation damages the presented GaN transistor structures have been considered.
Keywords
	gallium nitride, ionizing radiation, nanoheterostructures, two-dimensional electron gas, microwave HEMT
Library reference
	Gromov D.V., Matveev Y.A., Nazarova G.N. Impact of ionizing radiation on GaN HEMTs // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 598-603.
URL of paper
	http://www.mes-conference.ru/data/year2012/pdf/D120.pdf