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| TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface |
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| Authors |
| | Artamonova E.A. |
| | Golishnikov A.A. |
| | Krupkina T.Yu. |
| | Rodionov D.V. |
| | Chaplygin Yu.A. |
| Date of publication |
| | 2012 |
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| Abstract |
| | In this paper we study the effects caused by surface roughness in the 45 nm MOSFET’ channel at the Si/SiO2 interface. Mobility component connected with surface scattering and electrical characteristics were analyzed with TCAD Synopsys. |
| Keywords |
| | process and device simulation, TCAD, Si/SiO2 interface, MOSFET, atomistic effects, carriers mobility simulation |
| Library reference |
| | Artamonova E.A., Golishnikov A.A., Krupkina T.Yu., Rodionov D.V., Chaplygin Yu.A. TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 199-202. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D102.pdf |
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