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Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design
Authors
	Drozdov D.G.
	Savchenko Ye.M.
	Siomko V.O.
Date of publication
	2012
Abstract
	In this paper features of the design of AlGaN/GaN heterostructures and AlGaN/GaN based devices in technology computer aided design are considered. Methods of calculation, the results of measurements of transistors based on AlGaN/GaN heterostructures are presented and comparison of calculated and experimental data is shown.
Keywords
	AlGaN/GaN, HEMT, TCAD
Library reference
	Drozdov D.G., Savchenko Ye.M., Siomko V.O. Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 213-216.
URL of paper
	http://www.mes-conference.ru/data/year2012/pdf/D98.pdf