| Implementation of SHF OA in limited BiCMOS basis |
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| Authors |
| | Krutchinsky S.G. |
| | Zhebrun E.A. |
| Date of publication |
| | 2012 |
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| Abstract |
| | On the basis of functional-topological principles of self- compensation and cancellation of field-effect and bipolar transistors small-signal parameters influence a set of MOS dynamic loads and single-stage OpAmp circuits have been proposed. A distinctive feature of the circuits is the equality of p-MOS and n-p-n heterojunction transistors contributions. Results of OA modeling on technical process SGB25VD basis have been presented. The advantages of proposed solutions have been shown. |
| Keywords |
| | operational amplifiers, IP blocks, self-compensation and cancellation, parametric sensitivity, compensating feedback loops. |
| Library reference |
| | Krutchinsky S.G., Zhebrun E.A. Implementation of SHF OA in limited BiCMOS basis // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 308-313. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D73.pdf |
