| Appraisal of constructive-technological capabilities improvement of radiation hardening deep sub-micron VLSI |
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| Authors |
| | Seletskiy A.V. |
| | Shelepin N.A. |
| Date of publication |
| | 2012 |
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| Abstract |
| | The article presents a method of creating radiation-hardened deep-submicron VLSI, based on slight modification of their manufacturing process flow. The basis of the proposed method is to create a narrow range of p-type concentrations along side and the bottom surface of the isolation of active regions. Technological modes of formation of these areas and the electrical characteristics of the devices obtained by device-technological modeling. |
| Keywords |
| | CMOS transistor, cosmic radiation, total ionizing dose, radiation resistance. |
| Library reference |
| | Seletskiy A.V., Shelepin N.A. Appraisal of constructive-technological capabilities improvement of radiation hardening deep sub-micron VLSI // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 588-593. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D63.pdf |
