| Modeling of plasma-chemical etching technology in RF discharge |
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| Authors |
| | Grigoryev Yu.N. |
| | Gorobchuk A.G. |
| Date of publication |
| | 2012 |
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| Abstract |
| | Within the scope of hydrodynamic approach the plasma-chemical etching technology of silicon in CF4/O2 RF discharge was simulated. The calculations were carried out based on mathematical model of nonisothermal plasma-chemical reactor. In the model the gas flow was described by the equations of multicomponent physical-chemical hydrodynamics taking into account the convective-diffusion transfer of independent mixture components. For the calculations of main characteristics of low-temperature plasma the hydrodynamic model of axi-symmetric RF discharge in the three-moment approach was used including the solutions of continuity equations for electrons and positive ions, electron energy balance equation and Poisson equation for electric potential. The effect of RF discharge structure and multicomponent plasma kinetics on the production and masstransfer of active particles in the plasma-chemical etching reactor was studied. |
| Keywords |
| | plasma-chemical etching, plasma-chemical reactors, multicomponent gas mixtures, mathematical modeling |
| Library reference |
| | Grigoryev Yu.N., Gorobchuk A.G. Modeling of plasma-chemical etching technology in RF discharge // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 217-220. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D57.pdf |
