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Circuitry design features of radiation-resistant IC ABMC

Authors
 Krutchinsky S.G.
 Titov A.E.
Date of publication
 2012

Abstract
 Results of structurally-optimum circuit diagrams designing of radiation-resistant nodes IC and IP blocks SiP, possessing high metrological properties under the action of destabilizing factors gamma - neutron flux, radiation dose and temperature. Circuit diagrams of nodes IC based radiation-resistant analogue base matrix chip ABMK are resulted. Efficiency offered circuit decisions is shown.
Keywords
 self compensation, radiation-resistant, dynamic load, common-mode rejection ratio
Library reference
 Krutchinsky S.G., Titov A.E. Circuitry design features of radiation-resistant IC ABMC // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 274-279.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D47.pdf

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