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| Radiation hardened analog IC |
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| Authors |
| | Dvornikov O.V. |
| | Tchekhovski V.A. |
| | Diatlov V.L. |
| | Bogatyrev Yu.V. |
| | Lastovski S.B. |
| Date of publication |
| | 2012 |
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| Abstract |
| | Influence of gamma radiation 60Co and 4 MeV electrons on static and dynamic characteristics of the transresistance amplifier and the comparator is described. Both chips are semi-custom and implemented in the master slice array “ABMK 1-3”. The 25% comparator input current increase has been determined at the absorbed dose D = 5 Mrad (80% at the electron fluence FE = 7∙1015 sm-2) while other IC parameters: gain, impulse response of the transresistance amplifier, propagation delay, transition time, output current of the comparator – have changed slightly. |
| Keywords |
| | radiation hardness; gamma radiation, electron fluence, comparator, transresistance amplifier, bipolar analog IC |
| Library reference |
| | Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Bogatyrev Yu.V., Lastovski S.B. Radiation hardened analog IC // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 280-283. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2012/pdf/D14.pdf |
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