Submicron CMOS digital elements with elevated performance stability from the impact of atmospheric neutrons |
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Authors |
| Olchev S.I. |
Date of publication |
| 2010 |
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Abstract |
| Single event effects are the main effects which occur when atmospheric neutrons interaction with VLSI. Simulation has shown that dual port elements of combinational logic designed by manufacturing technologies CMOS 0.18 μm and 0.25 μm have the value of critical charge about one order higher than elements of conventional CMOS digital architecture. Furthermore, dual port elements have the same operation speed. A method to reduce sensitive area of the dual port elements has been proposed. It has been justified that a scheme of the tristate converter converting two phase signal into one phase signal has the elevating noise immunity. |
Keywords |
| single event upset and single event transient immunity; digital logic elements |
Library reference |
| Olchev S.I. Submicron CMOS digital elements with elevated performance stability from the impact of atmospheric neutrons // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 261-264. |
URL of paper |
| http://www.mes-conference.ru/data/year2010/papers/m10-365-75551.pdf |