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| Dual-beam technology application for phase change nonvolatile RAM array prototyping |
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| Authors |
| | Anufriev Yu.V. |
| | Zenova E.V. |
| | Kondratjev P.K. |
| | Balashov D.S. |
| | Salnikov S.M. |
| Date of publication |
| | 2010 |
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| Abstract |
| | possible fabrication technique of phase change nonvolatile RAM array prototype is described. Dual-beam research system NOVA 600 NanoLab application as main processing equipment was considered. Path flow and flow features applied in this paper are expounded. |
| Keywords |
| | nonvolatile nanoscale memory, Phase RAM, Dual-beam, FEI. |
| Library reference |
| | Anufriev Yu.V., Zenova E.V., Kondratjev P.K., Balashov D.S., Salnikov S.M. Dual-beam technology application for phase change nonvolatile RAM array prototyping // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 658-661. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-356-17292.pdf |
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