Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

High-frequency low-noise CMOS amplifier
Authors
	Balashov E.V.
	Korotkov A.S.
Date of publication
	2010
Abstract
	À method of the parametric synthesis for high-frequency low-noise CMOS amplifiers with low power consumption for communication system frontend is proposed. Synthesized narrow- band amplifier chip is designed using 0.18-um CMOS UMC technology with operating frequency 2.4 GHz and 4 mW power consumption. The parameters |S21| and |S11| are 22 dB and minus 30 dB, respectively, with noise figure 2.9 dB. The analysis of nonlinear intermodulation distortion using the Volterra series is developed. An estimation accuracy of the intercept point of 3-rd oêder IIP3 is 3 dBm. The developed amplifier provides two times lower power consumption compared with similar implementations. The results of simulation and experiment is presented.
Keywords
	CMOS technology, low noise amplifier, moderate inversion, nonlinear distortion, the intercept point of 3-rd order
Library reference
	Balashov E.V., Korotkov A.S. High-frequency low-noise CMOS amplifier // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 565-570.
URL of paper
	http://www.mes-conference.ru/data/year2010/papers/m10-344-79321.pdf