Technology migration of CMOS band gap voltage reference |
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Authors |
| Makarov A.B. |
| Kochkin I.P. |
Date of publication |
| 2010 |
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Abstract |
| Technology migration of well known CMOS band gap voltage reference is analyzed.
Impact of such factors as resistor’s temperature coefficient, bipolar diode’s parasitic devises, OPAMP offset voltage are estimated. Method of first order temperature correction is investigated. The rules and algorithm of migration are proposed. |
Keywords |
| technology migration, CMOS, voltage reference, temperature correction. |
Library reference |
| Makarov A.B., Kochkin I.P. Technology migration of CMOS band gap voltage reference // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 547-552. |
URL of paper |
| http://www.mes-conference.ru/data/year2010/papers/m10-140-24651.pdf |