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| A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology |
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| Authors |
| | Budyakov A.S. |
| | Savchenko Ye.M. |
| | Pronin A.A. |
| | Kozynko P.A. |
| Date of publication |
| | 2010 |
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| Abstract |
| | Measurement results of monolithic RF power amplifier integrated circuit based on silicon
technology are presented. The problems of silicon monolithic RF power amplifier design are described. |
| Keywords |
| | monolithic RF power amplifiers, silicon transistors, SiGe, thermal stability, thermal
runaway. |
| Library reference |
| | Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A. A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 577-582. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-34-37421.pdf |
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