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Estimation of CMOS VLSI hardness for high dose rate pulse irradiation

Authors
 Sogoyan A.V.
Date of publication
 2010

Abstract
 A method of CMOS VLSI total dose hardness estimation for high dose rate pulse irradiation is presented. It is based on the analysis of VLSI response to lower dose rate pulses bunch. The conservativity of the test is ensured according to
the processes of charge transport and relaxation regardless of field and technology conditions.
Keywords
 VLSI; irradiation; dose; dose rate.
Library reference
 Sogoyan A.V. Estimation of CMOS VLSI hardness for high dose rate pulse irradiation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 253-256.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-294-88591.pdf

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