| Numerical model of semiconductors with crystal heating |
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| Authors |
| | Rusakov A.S. |
| | Romano V. |
| Date of publication |
| | 2010 |
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| Abstract |
| | Solutions of a new 2d semiconductor numerical model describing the electron transport in semiconductors coupled with the heating of the crystal lattice are presented. The model equations have been obtained with the use of
the maximum entropy principle. Numerical simulations of a nanoscale MOSFET and inverter circuit are presented and the influence of self heating on the electrical characteristics is analyzed. |
| Keywords |
| | maximum entropy principle; numerical semiconductor modeling; thermal modeling. |
| Library reference |
| | Rusakov A.S., Romano V. Numerical model of semiconductors with crystal heating // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 70-75. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-207-53941.pdf |
