| Electromigration Tolerance Improvement in Standard Cells |
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| Authors |
| | Mukhanov K.S. |
| | Sotnikov M.A. |
| Date of publication |
| | 2010 |
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| Abstract |
| | The automatic correction of standard cell layouts became a real issue in terms of electromigration tolerance improvement. This paper describes an algorithm of such automatic correction based on restriction graph. The improvement made by the algorithm rests on the data got from ClariNet analysis of input layout. The effectiveness of the described algorithm is proofed by a comparison of the ClariNet data before and after cell’s improvement. |
| Keywords |
| | electromigration, layout compaction, standard cells |
| Library reference |
| | Mukhanov K.S., Sotnikov M.A. Electromigration Tolerance Improvement in Standard Cells // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 208-213. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-27-38301.pdf |
