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Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over
Authors
	Drozdov D.G.
	Savchenko Ye.M.
	Zubkov A.M.
Date of publication
	2010
Abstract
	In article presented results of technological and devices modeling of the complementary bipolar technology providing cutoff frequency of transistors of 10 GHz are considered and breakdown voltage Uce=12 V, includes use of two layers polysilicon, technology of self-aligned, and also the combined isolation of elements integrated circuit. Modeling is realized by means of complex program Sentaurus TCAD of company Synopsys.
Keywords
	IC, npn- and pnp-transistors, cutoff frequency, TCAD.
Library reference
	Drozdov D.G., Savchenko Ye.M., Zubkov A.M. Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 66-69.
URL of paper
	http://www.mes-conference.ru/data/year2010/papers/m10-216-85882.pdf