| CMOS-APS element with high charge-collection efficiency |
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| Authors |
| | Pugachev A.A. |
| | Stempkovsky A.L. |
| Date of publication |
| | 2010 |
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| Abstract |
| | The new structure of CMOS active pixel sensor with high charge collection efficiency is developed. The electric fields in special full depleted epitaxial layers carries the photogenerated electrons to photodiode area. The technological parameters of the new device are obtained by two-dimensional device simulation. |
| Keywords |
| | CMOS image sensor pixel, pixel structure, two-dimensional device modeling, fill-factor |
| Library reference |
| | Pugachev A.A., Stempkovsky A.L. CMOS-APS element with high charge-collection efficiency // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 648-653. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-144-65161.pdf |
