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Low-noise Charge Sensitive Amplifiers for Hybrid Pixel Detec-tors
Authors
	Barzdenas V.
Date of publication
	2010
Abstract
	GaAs integrated circuit the charge sensitive amplifier (CSA) is generally used for the active-pixel detectors (APD) in mammography and dentography. This work is a review on physical principles of operation and design of the APD developed on the CMOS, MESFET-technology. The CSA has bipolar response with peaking time about 8.5 ns and transfer coefficient is 37.7 – 40.5 mV/fC, equivalent noise charge of input ENC less than 200 ē and low power consumption is 0.94 mW, when input charge is 20 fC, load resistance – 1 MΩ and the capacitance – 2.5 pF. Input capacitance Cdet varied from 0.05 to 0.2 pF, and the input signal -from 1 to 50 fC.
Keywords
	hybrid pixel detector, charge sensitive amplifier, equivalent noise charge, CMOS, GaAs MESFET-technology.
Library reference
	Barzdenas V. Low-noise Charge Sensitive Amplifiers for Hybrid Pixel Detec-tors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 543-546.
URL of paper
	http://www.mes-conference.ru/data/year2010/papers/m10-159-26211.pdf