| Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters |
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| Authors |
| | Chaplygin Yu.A. |
| | Krupkina T.Yu. |
| | Krasukov A.Yu. |
| | Artamonova E.A. |
| Date of publication |
| | 2010 |
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| Abstract |
| | this article is devoited to investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters. All dependences were calculated using Synopsys process and device simulation programs – TCAD. |
| Keywords |
| | Smart Power Integrated Circuits, high voltage MOSFET, Silicon-On-Insulator, Safe Operating Area. |
| Library reference |
| | Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova E.A. Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 654-657. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-52-67771.pdf |
