| Modeling of the charge gathering from the heavy charged particles influence in CMOS integrated circuit |
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| Authors |
| | Zolnikov V.K. |
| | Potapov I.P. |
| | Tapero K.I. |
| Date of publication |
| | 2010 |
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| Abstract |
| | The article considers problems of the heavy charged particle effects modeling in a CMOS-structure of integrated circuit. Numerical formulas of the charge from the heavy charged particle influence calculation in sensitive elements of GSI are resulted. The offered technique allows calculating for a preset value of linear losses of energy of falling particles the impulse form of ionizing current and dependence of the collected charge fromtime after particle hit. |
| Keywords |
| | designing; radiation; heavy charged particles; stability; CMOS; ìèêðîñõåìû; integrated circuit. |
| Library reference |
| | Zolnikov V.K., Potapov I.P., Tapero K.I. Modeling of the charge gathering from the heavy charged particles influence in CMOS integrated circuit // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 275-278. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2010/papers/m10-83-12571.pdf |
