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Method and means of built-in self-testing of memory chip
Authors
	Andrienko V.A.
	Ryabtsev V.G.
	Utkina T.Yu.
Date of publication
	2010
Abstract
	The method and built-in self-testing means are offered that ensure receiving of all possible combinations of data codes, kept in contiguous cells, circumferential base cells, what is led to exposure of refuses, caused the cross-effect of memory cells.
Keywords
	Walsh functions, memory chip, self-testing means.
Library reference
	Andrienko V.A., Ryabtsev V.G., Utkina T.Yu. Method and means of built-in self-testing of memory chip // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 386-389.
URL of paper
	http://www.mes-conference.ru/data/year2010/papers/m10-37-52131.pdf