| Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures |
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| Authors |
| | Torgovnikov R.A. |
| Date of publication |
| | 2005 |
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| Abstract |
| | In the present work the advanced technique of device-technological designing of SiGe BiCMOS devices, used by company IBM is realized. By means of tool ISE-TCAD simulation of modern bipolar heterojunction transistors and MOS-transistors with Si/SiGe heterojunction channel is performed. |
| Keywords |
| | Device-technological simulation |
| Library reference |
| | Torgovnikov R.A. Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures // Problems of Perspective Microelectronic Systems Development - 2005. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2005. P. 173-178. |
| URL of paper |
| | http://www.mes-conference.ru/data/year2005/25.doc |
