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Research of characteristics of artificial inductance on MOS transistors
Authors
	Buniatyan V.V.
	Travadzhyan G.M.
	Travadzhyan L.M.
Date of publication
	2008
Abstract
	The scheme of realization of artificial inductance on MOS transistors is considered. Conditions of occurrence of a mode of negative dynamic active resistance are defined. Dependences of size of negative equivalent resistance on factor of strengthening of the operational amplifier, and also on parameters of the MOS transistor are investigated. Using results of research on the basis of the offered scheme, and also the mode of generation of fluctuations can be realized.
Keywords
	artificial inductance
Library reference
	Buniatyan V.V., Travadzhyan G.M., Travadzhyan L.M. Research of characteristics of artificial inductance on MOS transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 390-393.
URL of paper
	http://www.mes-conference.ru/data/year2008/72.pdf