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Simulation of transistor structures of power electronics
Authors
	Petrosyants K.O.
	Ryabov N.I.
	Kazakov V.I.
	Makeev V.V.
	Rusakov D.N.
	Chirkin G.K.
Date of publication
	2005
Abstract
	The technique of device-technological simulation of transistor structures of power electronics is fulfilled. The technique is realized on the basis of ISE TCAD.
Keywords
	power electronics
Library reference
	Petrosyants K.O., Ryabov N.I., Kazakov V.I., Makeev V.V., Rusakov D.N., Chirkin G.K. Simulation of transistor structures of power electronics // Problems of Perspective Microelectronic Systems Development - 2005. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2005. P. 151-158.
URL of paper
	http://www.mes-conference.ru/data/year2005/22.doc