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Analog-digital microcircuits on the basis of Si-Ge technology – a new direction in a domestic SHF systems engineering

Authors
 Malyshev I.V.
 Ionov P.L.
 Repin V.V.
Date of publication
 2008

Abstract
 The brief review of development of domestic microcircuits of the SHF range on the basis of new technological process – SiGe BiCMOS is presented. The basic advantages and the physical effects used at insertion SiGe in standard BiCMOS process, possible scopes, examples of the created and developed SHF microcircuits, and also prospects of development of the given direction are considered.
Keywords
 Analog-digital microcircuits, Si-Ge technology, SHF system engineering
Library reference
 Malyshev I.V., Ionov P.L., Repin V.V. Analog-digital microcircuits on the basis of Si-Ge technology – a new direction in a domestic SHF systems engineering // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 293-296.
URL of paper
 http://www.mes-conference.ru/data/year2008/53.pdf

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